The Research Of Residue And Defect Improvement During Polysilicon Gate Dry Etching

The purpose for this thesis is to analysis the low yield cases caused by poly-silicon residue and inline defect cases on Poly-silicon Gate Dry etching in fabrication.To find an ideal solution for these cases after some experiments.For the low yield cases caused by poly-silicon residue,through increasing over etch step time,0.18?m production's poly-silicon residue on STI divot improves,and yield improves about 2%;through increasing BARC etch step time,0.11?m production's poly-silicon residue between small space size area improves,and yield improves about 3%;through removing N₂ gas,1?m production's poly-silicon residue on high resistance area improves,and yield improves about 30%.For the inline defect cases,through adding treatment step at the end of etch recipe,ball defect on power MOS production was solved;through refine over etch step recipe body,condense defect on power MOS production was solved;through classifying poly etching processes,block etch defect on poly etching process was solved;through changing wet process condition,stick particle on poly etching process was solved.