| As we approach the limit of minimum feature size in silicon based technology, there.;is a need to move to novel, low-dimensional, multi-functional materials which can power.;the future generations of computers. Many complex oxide materials show a rich variety.;of multi-functional properties and are thought to be viable candidates for future comput-.;ing devices. We study here one such complex oxide heterostructure, the LaAlO3 /SrTiO3.;(LAO/STO) interface, which has been shown to host a two dimensional electron gas.;(2DEG). Physical phenomena that have been observed at the interface include super-.;conductivity, magnetism, a metal-to-insulator transition, and a gate voltage tuned two.;dimensional superconductor-to-insulator transition (SIT). This thesis presents evidence.;for the coexistence of the two conventionally competing phenomena of superconductivity.;and ferromagnetism at the interface. It further explores the interplay between the two.;orders through electrical transport measurements, which results in a novel manifestation.;of charge-vortex duality between the superconducting and insulating states as the system.;is tuned through the gate voltage tuned SIT. A phenomenological model of the system.;is presented which helps explain the observed transport behaviour. Finally, the magnetic.;field tuned SIT at this interface is also presented along with a scaling analysis of the.;magnetoresistance. |
