| Ballistic electron emission luminescence (BEEL), since proposed by Dr. Appelbaum in 2003, is receiving considerable attention from the field of material science and semiconductor engineering. With respects to the tremendous developments in the field of solid state optically active device, such as heterostructure-based light emitting diodes (LEDs) on the scale of nanometer, however, it is difficult to characterize the carrier generation, transport and recombination due to direct optic observation is encumbered by the fact that most of the involved processes occur deeply below the material surface. The requirements of higher efficiency, brighter luminescence, broader wavelength spectrum and stable productivity call for effective methods in revealing and monitoring the detailed mechanisms. Based on the successful progress in ballistic electron emission microscopy (BEEM), hot electron induced luminescence provides a unique way to examine the dynamics of excess carriers in a deeply buried depth.;In this thesis, BEEL device with integrated photo detector is designed and fabricated to realize the idea of detecting the bandage luminescence in sample heterostructure by injection of low-energy hot electron. Si p-n junction detector is integrated into the device by means of vacuum wafer bonding. Both luminescence and photocurrent are measured simultaneously at low temperature (85K) within four-terminal connection mode.;The outline of this thesis is as follow: First of all, the background of this research is introduced base on the literature review; secondly, the fabrication processes as well as the measurement setup is descried in detail; in the following chapter, measurement results both in optics and electrics are demonstrated and discussed; finally, in the summary future experiments are prospected based on the work in this thesis. |
