Temperature Model Establishment And Characteristic Analysis Of SiC MOSFET

Silicon carbide(SIC)is one of the representatives of new power semiconductor materials.It has a wide band gap and is not easy to be broken down by electric field.It has many advantages such as high power density,high thermal conductivity and so on.Therefore,the power semiconductor devices made of SiC materials have attracted wide attention.Among them,SiC MOSFET devices have become the focus of attention.In order to accurately reflect the working characteristics of SiC MOSFET devices in a larger temperature range,a more accurate temperature model of SiC devices is needed,which plays an important role in the development of science and technology.This paper selects the most common Cree company's silicon carbide MOSFET devices in the market to build and analyze the temperature model.Taking C2M0025120D(1.2KV / 90A)as an example,the whole process of building the temperature model of silicon carbide MOSFET devices in PSpice software is introduced in detail,including the specific methods of modeling temperature control voltage source,temperature control current source,temperature control resistance and parasitic capacitance,as well as the process of extracting the parameters needed for modeling from the technical manual.The static characteristics of the temperature model at different temperatures are simulated Compared with the technical manual,the influence of temperature on the threshold voltage and on resistance of SiC MOSFET is analyzed.The C2M0080120D(1.2KV / 36A)device is selected for modeling and simulation again.The results are basically consistent with the characteristic curve in the technical manual,which further verifies the universality of the model.The dynamic characteristics of the temperature models of the two devices are tested by the double pulse experimental platform,and the switch process waveforms at different temperatures are obtained.The experimental results are basically consistent with the simulation results,which verifies the accuracy of the model.The work of this paper provides some reference for the circuit simulation and analysis of SiC MOSFET.