Research On Schottky Barrier Tunneling Field Effect Transistor With Interchangeable Source-Drain Switch

With the continuous development and maturity of semiconductor technology,higher requirements have been placed on the transistor as the basic unit of large integrated circuits.Moore's Law shows that with the development requirements of the semiconductor industry,the size of devices will continue to shrink.Until today,microelectronics technology has reached the nanometer level,but when it is scaled down to the nanometer scale,it has brought many negative effects.For example,the reduction in the size of the MOSFET will inevitably make the channel length smaller,bringing a more obvious short channel effect.Moreover,due to power consumption limitations of integrated circuits and the subthreshold swing of MOSFET transistors cannot be lower than 60 m V / dec under normal temperature conditions,these two problems also make it more and more difficult for MOSFET devices to meet today's needs.The traditional tunneling field effect transistor(TFET)is formed by adding a layer of low-doped intrinsic semiconductor between P and N-type semiconductor materials.Compared with metal oxide semiconductor field effect transistors(MOSFETs),TFETs have the advantages of high sensitivity and low static power consumption.Ordinary tunneling field effect transistors and MOSFETs have different conduction principles,and they work through a carrier tunneling mechanism.This working mechanism enables TFET to have a lower sub-threshold swing,which is no longer limited by the sub-threshold swing of MOSFET-type devices at room temperature can never be lower than 60 mV / dec.Because the subthreshold swing directly affects the switching performance of the device.Therefore,tunneling field effect transistors are superior to MOSFET transistors in terms of device switching performance.However,because the tunneling field effect transistor is limited by the width of the forbidden band of the semiconductor material,the tunneling field effect transistor cannot produce a high probability of tunneling,so its on-current is limited.Compared with MOSFET devices,the on-current of tunneling field effect transistors is lower.What is more serious is that because the doping types of the source and drain electrodes of the tunneling field effect transistor are different,its structural characteristics are asymmetrical,so in some ways it cannot replace MOSFETs with symmetrical structural characteristics.The barrier formed by the contact between metal and semiconductor is called Schottky barrier.Schottky barrier field effect transistors use Schottky barrier tunneling as the conduction mechanism.Compared with tunneling transistors,the height of the Schottky barrier is lower than the width of the forbidden band of the semiconductor,so it can have a relatively higher chance of tunneling.And because the amount of electrons that can be provided by the metal is higher than that of the semiconductor,the on-current density of the Schottky barrier field effect transistor is higher than that of the tunneling field effect transistor.Combining the current microelectronic technology and the performance of traditional semiconductor structures,this paper proposes a source-drain interchangeable bidirectional switch Schottky barrier tunneling field effect transistor.The structure of the device is symmetrical,and it has bidirectional switching characteristics in which the source electrode and the drain electrode can be swapped with each other.It has the advantages of high forward and reverse current ratio and low sub-threshold swing in electrical characteristics.This topic uses SILVACO-TCAD software to simulate the proposed source-drain interchangeable bidirectional switch Schottky barrier tunneling field effect transistor.Several groups of device parameter values were changed,and the effect of parameter changes on the electrical performance of the transistor was studied.Combining the image and theoretical knowledge to explain the simulation results,analyze the image trend and several important device indicators,and obtain the most reasonable size of the Schottky barrier tunneling field effect transistor with interchangeable source-drain switch To achieve the best electrical performance.It has certain value for the future development of semiconductor devices and the development of integrated circuits.