A Novel High Schottky Barrier Source/drain Contacts Based Bilateral Gate And Assistant Gate Controlled Tunnel Field Effect Transistor

With the increase of social demand and the progress of science and technology,semiconductor integrated circuit has become an indispensable part of social life.However,due to the limitation of sub threshold swing and short channel effect,the traditional FET can no longer meet people's needs.In this paper,we propose a novel high Schottky barrier source/drain contacts based bilateral gate and assistant gate controlled bidirectional tunneling field effect transistor.Different from conventional Schottky barrier MOSFET which should make the Schottky barrier as low as possible,the proposed device utilizes higher Schottky barrier to minimize the current dominated by the Schottky barrier tunneling.On the contrary,the band-to-band tunneling(BTBT)current which works as the conduction mechanism of the forward current occurs near the interface between the source/ drain contacts and silicon body is maximized.An assistant gate is also introduced into the device structure which can efficiently block the reverse leakage current.Compared to conventional SB MOSFET or JL FETs,the proposed device can realize lower subthreshold swing,much smaller reverse biased GIDL current,higher Ion-Ioff ratio,compared to conventional TFET,it can realize much larger on current,besides the device symmetry makes it more compatible with MOSFET technology.Silvaco TCAD is used to simulate and analyze the device.The device structure was edited by DevEdit3 D,and the device structure was invoked in DeckBuild to simulate the electrical characteristics by Atlas simulation statement.Finally,it was displayed by view tool Tonyplot2 D.In Tonyplot2 D,the image is measured,transversal and superimposed to analyze the simulation results.By changing the influential device structure parameters,the final optimization of the parameters is realized through analysis and comparison,so that the device performance can reach the optimal value.All simulations in this project are conducted by quantum model,and the results are more accurate.