Pspice Model Of IGBT Based On PIN Diode

With the advent of the modern intelligent era,the status of semiconductor chip technology is becoming more and more important,and the state's support for the semiconductor industry is also increasing year by year.PIN diodes and IGBT,whichare the most common and high-end devices in the semiconductor field,have been thehotspot of research.The simulation models of the two device is beneficial to promote the related application of the device in engineering,and it is convenient forresearchers to use the device model to simulate in circuit level,so it has great practical significance.This paper first introduces the structure and principle of PIN diode,expounds the diffusion and drift motion of carriers,and derives the bipolar diffusion equation of carrier transport in PIN diode.The Fourier transform is used to obtain the approximate solution of the bipolar diffusion equation under forward steady state.Then,based on the PIN tube of 4H-SiC material,a forward characteristic calculation model considering temperature influence is proposed.the bipolar diffusion equation is transformed into matrix algebraic equation by using the finite difference method,and the obtained matrix equation is transplanted into PSPICE software.The physical equation of PIN diode is solved by circuit simulation software,and finally the dynamic characteristics of PIN diode are obtained.By comparing the results with the device simulation,the correctness of the model is well verified.Finally,based on the PIN study,the IGBT is equivalent to two parts of MOSFET and PIN diode.The model of IGBT is established by PSPICE.The model mainly performs parameter matching from known electrical property data,and the model can be directly written into a library file,which is convenient for the user to call,and has good practicability.Compared with the silvaco-tcad device simulation and the existing model,it is proved that the model has a good fitting effect.