Research On Application Characteristics And Gate Driver Design Of High Power Reverse Conducting IGBT

Reverse-conducting IGBTs break the common IGBT+anti-parallel diode packaging mode,through the P area anti-doping technology to form the integrated diode inside the module,greatly improving the module's power density,and achieving good thermal characteristic,the module power capacity can reach 6500V/1000A,which is the maximum capacity currently in the silicon IGBT family,through the diode gate desaturation control strategy,the device loss can be greatly reduced,it has a wide range of application prospects.In this paper,the research status and development trend of high voltage and high power IGBT modules and reverse conducting IGBTs are introduced.The physical structure and operating principle of reverse conducting IGBTs are introduced.The mathematical model of internal P-i-N integrated diodes is established.The influence of the gate voltage on the diode characteristics is studied,and the desaturation control method of the diode in the reverse-conducting IGBT is derived.The inverse-guided IGBT model of the gate controlled diode based on Simulink is established.The simulation results show that the proposed model is effective.The thermal resistance circuit model of 6.5kV reverse-conducting IGBT and ordinary IGBT+FWD is compared,and the advantages of reverse-conducting IGBT in thermal characteristics are analyzed.Based on the double pulse test,the static and dynamic test of the device is carried out.The optimization of dynamic characteristics and loss of the module with two-level gate desaturation control is verified.The calculation method of three-phase inverter loss is deduced,the advantages of reverse-conducting IGBT in MW inverter are calculated and analyzed under certain operating conditions.The driving principle of IGBT and the calculation method of main parameters are deduced.The circuit design and parameter calculation of various parts of the gate driver for 6.5kV reverse-conducting IGBT are completed.The circuit structure of "mode detection + CPLD + drive voltage resistance output bridge" is set up,the reverse drive type IGBT drive algorithm is built and the driver schematic diagram and PCB plate making are completed.The effectiveness of the drive hardware circuit is verified by experiment.The experimental results of different desaturation modes are analyzed and the effects of each gate control mode on diode performance.At the same time,based on the three-phase inverter loss calculation method,the optimization effect of different diode control on system loss is compared,which has laid a theoretical and experimental foundation for the popularization and application of 6.5kV high power Reverse-Conducting IGBT.