Research And Design Of Dual-band And K-band Low Noise Amplifier Based On Sisl Platform

Up to December 2017,China had 753 million mobile Internet users,which generated a huge market demand for products related with WLAN standard 802.11a/b/g/n/ac.Dualband WLAN products,which are compatible with 2.45 GHz low frequency band and 5.15-5.85 GHz high frequency band at the same time,have become standard configuration in the market.The K-band(18 GHz-26.5 GHz)RF circuit has been widely used in air traffic management,automotive anti-collision radar,medical microwave probes,and satellite television reception due to its advantages of short wavelength,wide frequency band,high penetration,low loss,and robostness again interference.The market of WLAN dual-band and K-band RF circuits has a bright future.Low noise amplifier(LNA),as the core module of the receiver,its noise figure decides the sensitivity of the latter one.Therefore reducing the noise figure of LNA is one of the important considerations of the circuit designers.As a brand-new board-level circuit processing technology,Substrate Intergrated Suspended Line(SISL)has the advantages of high Q value,low loss,no dispersion,selfencapsulation,compact structure,small size,low cost,and is easy for large-scale manufacturing.Using SISL's high Q value,low loss,and compact structure to design the circuit can reduce the noise figure of the LNA,reduce its size,and increase its gain.The optimal design of SISL LNA is the main driving force of this thesis.This thesis investigates the development history and research status of WLAN dualband LNAs and K-band LNAs in detail,and summarizes their main implementating methods.Compared with the microstrip line and the traditional suspended line,the composition,electromagnetic characteristics and manufacturing methods of SISL are discussed in detail.After fully investigating the existing achievements of SISL,the advantages of SISL are summarized.This provides an important guidance for the circuit design in this thesis.In the circuit design section,the principle of reducing the noise figure with the high Q characteristic of the SISL is illustrated by formula derivation.Then the design process of WLAN dual-band,K-band and 5 GHz WLAN single-band LNA based on SISL process is described in detail according to the steps of parameters determination,board and device selection,schematic design,layout design,and experimental measurement.Because ADS Momentum cannot accurately simulate the special air cavity structure of SISL,the design in this thesis is designed using the method of HFSS and ADS co-simulation.In the design process of WLAN dual-band LNA,the author elaborately describes the design method of dual-band LNA by using a detailed formula,and obtains the parameter values of various components in the circuit by solving the equations.This design method can be used in the designs of the same category.Finally,the advantages of low noise,high gain,and small size of the SISL LNA process are highlighted through comparision with the designs of the same type,and the potential of the SISL process in LNA design is excavated.