Research On Electronic Characteristics And Device Simulation Of GaAs PHEMT

With the excellent performance of Ga As-based semiconductor materials,GaAs PHEMT devices are widely used in military radar systems,microwave communications,space technology among others.With the development of modernization of the national defense and the continuous innovation of the communication system,the demand for PHEMT devices and their circuits grows daily,requiring a better performance of these devices accordingly.In order to obtain devices with excellent performance,this paper focuses on the research of the electrical performance of GaAs PHEMT devices via simulation and analysis by using TCAD software?semiconductor process simulation and device simulation tool?.In this paper,firstly,the characteristics of GaAs-based semiconductor materials are analyzed,and the working principle of GaAs PHEMT devices is briefly introduced.Then,TCAD software is used for process simulation and device simulation.Process simulation is carried out to obtain the two-dimensional geometric structure of the device.Since the material structure of the device is the main factor in determining its performance,the effects of variation of the structural parameters of the device on electrical characteristics of GaAs PHEMT are analyzed theoretically,including two-dimensional electron gas?2DEG?,DC characteristics?I-V characteristic?,threshold voltage(V_th)and electron mobility???.To investigate different electrical characteristics,different parameters are taken into account.All the parameters considered in simulation include the plane doping concentration and thickness,the thickness of the barrier layer,the thickness of the Spacer layer,the Al content,the In content of the active channel layer and the gate length.Based on the analysis above,the simulation results of these devices are analyzed through one-dimensional and two-dimensional simulation results access tools.The variations on the electrical characteristics of these devices with the different parameters above are summarized and analyzed.The analysis results can be used as the basis for material and device structure design.In order to verify the validity and accuracy of the numerical simulation,the simulation results of the device are compared with the experimental data and the analytical solution obtained from mathematical model,and the error is also analyzed.The results show good agreements,and the accuracy of the analysis method is further verified.In summary,the GaAs PHEMT device is numerically simulated using TCAD software,and optimal values in selecting material structure parameters for excellent device performance are obtained via analyzing the results.The numerical simulation results can be provided to assist semiconductor device designers to better understand the physical characteristics of the device and to optimize the design of the device.