Design Of Silicon Based Microwave Low Noise Amplifier Integrated Circuit

Wireless communication develops rapidly in the recent years.Spectrum resource in low frequency band becomes very scarce,and it is the trend to use the higher spectrum.So it is beneficial to wider bandwidth,higher channel capacity,grater data rates.Low noise amplifier is the first active amplifier module in the receiver.It amplifies the received signal,but it brings noise into the system as little as possible.It has deep influence on the distinguishing the received signal.As for integrated circuit process based on silicon,the length per figure of the MOSFET is shorter,and the characteristic frequency is higher.So it can be used in the microwave circuit designed.What is more,it has the advantage of low cost,low power,high integration.So it has great practical and academic significance to make the design of silicon based microwave low noise amplifier integrated circuit.To begin with,the integrated circuit process is selected with the specific project indicators.The length per figure of the MOSFET,the width per figure of the MOSFET,the number figures of the MOSFET and the bias voltage of the MOSFET is explored.In order to simulate of the microwave circuit,process model is built in the software of HFSS.An inductor is simulated in the HFSS model to compare with the same size inductor of the CMOS model.And the integrity flow of the microwave integrated circuit is showed.As the following,a Ku band single ended low noise amplifier is designed based on the CMOS 180 nm process.To solve the high noise figure and high power consumption problem of the conventional topology,a transformer coupled double-input topology is proposed as the first stage of the low noise amplifier.And the cascode is the second stage.The measured results show that the highest gain is 18 dB at 17.5GHz,and the lowest noise figure is the 3.29 dB at 17.4GHz.The low noise amplifier only consumes 7mA with 1.8V voltage supply.The gain is improved 10% compared with the gain of two common gate stages,and the noise figure is reduced 18% compared with the noise figure of two common gate stages.The tested input 1-dB compression point of the low noise amplifier is-12 dBm,and 0.48mm~2 is occupied.As the designed showed,double-input topology can improve the gain and reduce the noise figure.Finally,a Ku band differential low noise amplifier is designed based on the CMOS 180 nm process.A capacitor cross-coupled topology is employed as the first stage.And the cascode is the second stage.The designed low noise amplifier can reduce the effect of the wire bond which is serious in the single end circuit,and has a good performance of PVT simulation.The new rectangle inductor is used in the differential low noise amplifier,which makes the size is only 30% of the single ended low noise amplifier.the performance of the differential low noise amplifier achieves the project indicators.