Design Of 1200V RC Trench IGBT

IGBT(Insulated Gate Bipolar Transistor), as the third generation of power electronic products, has become one of the most important power semiconductor devices. With its good comprehensive performance, IGBT is widely used in household appliances, transportation, motor control, smart grid, and many other fields.Since been invented, miniaturization and integration have been an important trend in the development of IGBT. In many applications, the IGBT usually needs a diode in anti-parallel to conduct the power current. Because the IGBT and the diode are in different packages. Inevitably, there will be parasitic resistance, inductance, etc, which will have effect on the performance of circuits. Reverse Conducting IGBT,with integrated diode, can eliminate the effects of these parasitic parameters, improving the reliability of the device.In China, the research of IGBT began late, and manufacturing process is relatively backward. RC IGBT products are launched by large foreign companies,such as Infineon, ABB and so on.Until now,we don`t have domestic independent brands for RC IGBT, and the worse is the relevant research is very lacking.Based on this, this paper works on the design and analysis of 1200 V RC Trench IGBT, as an reference for manufacturing and further research device.In this thesis, the main contents are as follows:1. Based on the Trench IGBT theory,introduce RC Trench IGBT, including operating theory, the phenomena of snap-back, forward blocking state and switching behavior. Using theory and modeling,emphatically analyze the snap-back phenomena of the RC Trench IGBT,and put forward the causes and solutions.2. Propose the design of the RC Trench 1200 V IGBT manufacturing process,use one more mask to manufacture the N region of the collector. Based on this process, use simulation software TSUPREM4 and MEDICI to design and optimize the cell,termination and layout of RC Trench IGBT. The designed 1200 V RC Trench IGBT meets the requirement of breakdown voltage,and VCE is lower than 2.5 V,threshold voltage is 4 V-5.5 V,without snapback phenomena.