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The Design Of A 600V FS IGBT Device

Posted on:2015-11-22Degree:MasterType:Thesis
Country:ChinaCandidate:F Y KongFull Text:PDF
GTID:2308330473955531Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
The FS-IGBT structure is an important type of IGBT structures proposed in recent years. A nice compromise between the on-state loss and the breakdown voltage can be made by the FS-layer, as well as the on-state loss and the switching loss. Thus, FS-IGBT is widely used in the field of industrial and consumer electronics. However, the core technology of FS-IGBT is monopolized by large foreign companies, such as Infineon, Fairchild, Toshiba etc, which launch most of the FS-IGBT products on the market. Currently, the domestic commercialization of IGBT is at the initial stage and the technology of FS lags far behind that of the developed countries.In this thesis, the description is expanded around the research and development work of the 600 V Planar-Gate FS IGBT. With the cooperation of a well-known domestic factory, the design and manufacturing methods of a 600 V Planar-Gate FS IGBT device are proposed and the related testing work is carried out subsequently.1. Firstly, the analysis of the principle of IGBT and the FS structure is carried out. Considering the process line, the process design of the 600 V Planar-Gate FS IGBT device is carried out consequently, as well as the design of the cellular structure and the terminal structure. Finally, the layout drawing and tape-out are accomplished. The process design steps are carried out as follows. Firstly, the backside FS-layer is manufactured. Secondly, the front-side structure(including cellular structure and terminal structure) is done. The last step is the backside P+ implanting.2. The testing and the related analysis of the main parameters are carried out on the proposed device. The test results are as follows. The forward blocking voltage is larger than 700 V, the forward voltage drop is lower than 1.15 V, and the threshold voltage ranges from 4.1 to 4.5V. These parameters properly meet the design requirements.This thesis plays a positive role in the domestic study and industrialization of FS-IGBT device. Yields can be improved through the process and structure optimization, and better products can be achieved.
Keywords/Search Tags:Power Semiconductor Device, IGBT, Planar-Gate, Field-Stop
PDF Full Text Request
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