A Kinetic Growth Model Of Si_1-xGe_x Material Based On Dimer Theory And Diffusion Theory

With the wide application of Si1-xGexmaterial in the high-frequency field and thegrowing importance of SiGe in integrated circuit(IC), many research institutions havestrong interest on Si1-xGexmaterial. In order to get Si1-xGexfilm of good quality, itscomplex growth process and growth kinetics need to be studied.By analyzing the influence of Ge content on the growth of Si1-xGexthrough theexperimental results, the discrete flow density mechanisms and models are presented;Based on the dimer theory of Si-based semiconductor surface, the paper first proposesrate decomposition mechanisms and models of the CVD (chemical vapor deposition)epitaxial growth of Si1-xGexmaterial. In this paper, not only taking the controlmechanisms of surface reaction and vapor transportation into account, but alsoconsidering the independent growth and mutual influence between Si and Ge, then wepropose the rate decomposition model of growth kinetics model of Si1-xGexmaterial,which is different from previous Si1-xGex/Si heterojunction growth model that growth ofSi, Ge material is totally independent and only considering the surface reaction control.Through comparison, calculation results can match experimental results in differenttemperature. Due to analyze various growth factors, with advantage of clear physicmeaning and structure, this model fits the actual Si1-xGexgrowth process very well. It issuitable for CVD growth kinetics description of Si-based strain material in different gassupply systems and different temperature.