Research On Growth Mechanism And Kinetics For Si_1-xGe_x/Si Strained Materials

Si_1-xGe_x/Si heterostructure strained materials, as the next generation of silicon material, become more and more attractive, which is ascribed to the wide application both in Si_1-xGe_x/Si heterostructure high-speed devices and photoelectric devices. It is important and instructional for low dislocation, high quality devices manufacture to study on growth mechanism and growth kinetics of Si_1-xGe_x/Si strained materials.In this dissertation, characteristics, preparation processes and characterization methods of Si_1-xGe_x/Si strained materials were expatiated. Preparation processes, especially ultra high vacuum chemical vapor deposition (UHV/CVD) were described detailedly. Growth mechanism and kinetics of Si_1-xGe_x/Si strained materials were studied thoroughly and step by step, which based on CVD thermodynamics, kinetics and film material growth theories. And surface reaction kinetics models were obtained finally, modeling methods of gas kinetics model and unite model were also studied.Some parameters, like cohesion coefficient, activation energy and body atomic density were considered synthetically in the growth kinetics model, and the research is creative.