Research And Design Of GaN-based X-band Low Noise Amplifier And E/D Mode Voltage Level Shifter

Low Noise Amplifier (LNA) and Phase Shifter is the front-end of Radio Frequencyreceiver (RF receiver) in a radar system, which determines the character of RF receiver.Along with development of the Gallium Nitride (GaN) based devices and themonolithic microwave integrated circuit (MMIC) technology, the need of GaN basedlow noise amplifier and phase shifter with high performa nce expands increasingly. Inthis paper, a LNA covering X band is designed based on GaN based MMICtechnology, and a GaN based enhancement/depletion (E/D) voltage level shifter isdesigned. Throughout the design process, a novel design idea is adopted, reducing theperformance error of turning the circuit design from schematic to layout. In the designof GaN based E/D mode voltage level shifter, based on the existing semiconductorprocess, a new circuit structure is presented, meet the need of the design requirement.This paper analyses the non-ideal effects of planar spiral inductors, and completes15planar spiral inductors, whose inductances range from0.4nH to7.1nH. This papercompletes the design of X-band from8GHz to12GHz low noise amplifier, includingthe design of whole topology structur e, analyses the stability of the device, thedesign of the biasing circuits and the matching circuits, and finishes the simulation ofcircuit schematic. Replace the inductors in the schematic into the designed planarspiral inductors, and after optimization, comes out a new schematic. Finally, layout isfinished, and post-simulation is done.This paper analyses the condi tion to design GaN based E/D mode voltage levelshifter, and put forward a realizable circuit structure, this structure is proved right bysimulation. Simulation is made to test the ability to dr ive load, and a protecti oncircuit is designed. Finally, layout of GaN based E/D mode voltage level shifter isdesigned.