Computer Simulation Of Horizontal HVPE Grown GaN

The third generation of semiconductor materials represented by Ga N and SiC materials with advantages like a wide band gap(> 2.3eV), good thermal conductivity and saturated electron drift velocity etc. It can be used for the production of high temperature, anti-radiation, high-frequency,high-power elemental devices; with wide band gap, the third generation semiconductor material can also be used to produce blue-violet light emitting devices. As growth rate of HVPE is high. It can be used for the growth of GaN thick film, thereby preparing a homogeneous GaN substrate, thus greatly improving the performance of GaN-based optoelectronic devices. This paper focuses on the simulation by using FLUENT to get an optimized cavity structure.The FLUENT software used in this simulation experiment is a tool for calculating heat transfer and fluid dynamics. Aiming horizontal HVPE growth system based on actual data obtained experimentally, this paper established a horizontal HVPE reactor chamber dimensional grid structure, and reasonable optimization and adjustment of this grid structure was done. The database structure of the chemical reaction of each component and balance of chemical reaction are established, and simulated. Simulation including: 1, substrate from the entrance to the gallium chloride series; 2, gallium chloride gas inlet diameter series; 3, the growth rate of the gallium nitride and the uniformity of the substrate angle range series. Optimized parameters of the reaction cavity structure are obtained, GaN film grown under conditions of this parameter is of good uniformity and quality.