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Research On CMOS Image Sensor Of Space Radiation Effect

Posted on:2013-10-16Degree:MasterType:Thesis
Country:ChinaCandidate:H JinFull Text:PDF
GTID:2268330392468720Subject:Physical Electronics
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With the rapid development of the aerospace industry, the image sensor in the fieldof remote sensing satellites, communications satellites, navigation satellites andastronomical observations gain more and more attention. CMOS image sensor as animaging detector with its low power consumption, high sampling frequency,anti-radiation and random-reading ability has great potential applications in the field ofspace. Based on the particularity of the space environment, the device systems andpayloads used in space should consider the reliability and stability for spaceapplications. Severe radiation environment due to space, light intensity response of theCMOS image sensor and detection performance will be interfered by the radiationenvironment, which in severe cases can lead to not work normally even to be disabled.In this thesis, considering space radiation environment, both theoretical andexperimental studied on performance changes of the CMOS image sensors, mainly tocomplete the research work of the following aspects:CMOS image sensor space radiation effects theory. This section mainly include thespace environment, an overview of the division of the satellite orbit and the typicalparticle space distribution of research proposed dose value when the device groundsimulated space radiation experiments, analysis of radiation photovoltaic systems suchas satellites, spacecraft, surface material impact; analysis the working principle andcharacteristic parameters of CMOS image sensor; and its working mechanism of thecore device of photodiode and MOSFET are also discussed. On this basis, we analysisof radiation on the optical and electrical properties of CMOS image sensors, thenestablish the physical processes of radiation that affect the performance of CMOS imagesensors.Sources of ionizing radiation simulated(1MeV) space radiation environment tostudy the impact of the CMOS image sensor. Commercial CMOS image sensor forexperimental simulation of electron radiation in the radiation field. The effects ofradiation on the dark current of the CMOS image sensor, light intensity response, andthe unevenness of the impact of the dark output and obtained experimental results thetheoretical analysis in this on the basis of a mathematical model of radiation changes ofthe device dark current. We research on anti-radiation protection of the CMOS image sensor that used inspace environment. From design and process optimization of protective measures, andthe screening of the device, the device anti-radiation-hardened design and devices of thesensor circuit radiation shielding in radiation circumvent. The basic elements andprocesses of the sensor radiation hardened to protect technology.Radiation performance of any devices and payload-based applications in spacesystems should be considered for space applications. With electronic radiating onCMOS image sensor as the research background, these research works provide a newidea for other space photovoltaic systems and payloads of radiation effects. Above allthis thesis laid the foundation for the follow-up research courses based on a largenumber of experimental data we have collected.
Keywords/Search Tags:CMOS image sensor, Radiation effect, Radiation experiments, Intensityresponse, Radiation protection
PDF Full Text Request
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