Nanoscale Interconnect Power Modeling And Simulation Based On The Analytical Model

As the rapid development of VLSI technology, the power of interconnect hasbecome an important factor in the performance and reliability of the integrated circuits.This paper mainly focuses on the modeling of VLSI interconnect power. In this paper,the energy consumption of interconnect is respectively modeled based on the П circuitand nanometer scale coupled circuit. With further research of the analytical modelsgiven by this paper, some parameters which has a serious influence in the power ofinterconnect has been obtained, and some simulation has been made to analyze therelationship of the parameters and the interconnect power. Under the65nm and45nmprocess conditions, the interconnect power calculated by the models in this paper hasbeen proved of high accuracy by simulation. Meanwhile, the efficiency of the models inthis paper has been improved a lot compared to SPICE, a great mount of time forsimulation will be saved by using the models of this paper. So the models proposed inthis paper have unique advantages and potential applications in the field of VLSIinterconnect power analysis and optimization.