| The rapid development and widespread of the third generation (3G) mobilecommunication and the wireless local area networks (WLAN) technology have largelychanged daily life and industrial manufacture. WLAN technology has excellentperformance, such as high transmission speed, long communication distance and highreliability. WLAN is the critical technology for the next generation low costbroadband wireless networks and can make up for the usage that the3G is not good at.Power amplifier is the key point and also the difficult issue for WLAN. The newgeneration wireless communication technology requires that PAs should have goodlinearity, high efficiency. Because of the developing lagging in PAs, Commercial PAsare mainly imported abroad, so it is very important to develop our own high-performance PAs.Our developing work is based on SiGe BiCMOS process technology. Three-stagestructure is adopted due to the power gain concern. Base stability resistor is used toimprove the stability. A new structure of base stability resistor is used to improve thestability, in which each HBT is in series with a base stability resistor. The resistorshave appropriate resistance that reducing the influence of the process error. The PAhas an appropriate self-adaptation bias circuit and matching networks. The inputmatching network is L type, which is simple and can be adjusted to regulate theinductance and to optimize the input matching network. Furthermore, parasitic factorswere considered in layout and PCB design.The test results of the fabricated PA show that the PA achieves our designrequirements: a small signal gain of22.8dB, a1dB compression Poutof23dBm. |
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