Sige Bicmos Integrated Device Design And Key Technology Research

Based on the SiGe devices characters, unshaped HBT parameters are designed. According to simulation of process, the unshaped parameters have been adjusted. The initial parameters of 1.5μm SiGe BiCMOS are developed in this paper. Experiment has been carried out to study the quality of non-selective graphic epitaxial SiGe film, which is the key process of SiGe BiCMOS technology. The experiment test results indicate the high quality of the SiGe film.Firstly, based on the SiGe devices characters, SiGe HBT is a vital part of the SiGe BiCMOS devices. Unshaped HBT parameters are designed on principles. The simulation results show good electrical characteristics (β=210, fT=32GHz), and a flow suitable for 1.5μm SiGe BiCMOS is also developed.Secondly, adjusting the unshaped parameters according to simulation of process, the initial parameters are developed. Considering the outdiffusion effect caused by ion implantation and anneal, the unshaped parameters are adjusted by simulation. The thicknesses of bilateral intrinsic SiGe layers are set to 15nm to avoid the boron outdiffusion. Finally, the initial parameters of 1.5μm SiGe BiCMOS are developed.To handle the thermal budget in SiGe BiCMOS process, a non-selective graphic epitaxial technology has been developed. SEM, AFM, TEM, XRD and dislocation density measurements are carried out. The SiGe film's RMS roughness is 0.45nm, and dislocation density is 0.3×10³cm^-2 1.2×10³cm^-2. No dislocation accumulation exists on the boundary of the windows, which indicates the high quality of the SiGe film. The experiment results show that this SiGe film meets the fabrication requirements of SiGe BiCMOS.