Design And Fabrication Of Micro LED Array Display Device

LED micro-display device has many advantages, for example, low voltage, highefficiency, rapid response speed, firm performance and wide range of workingtemperature. Arrays of micro-sized LEDs have been demonstrated in recent years, asdevices which can be used as micro-display and optical switches in communicationnetworks, especially the3G and IPv6network technology in recent years.In this paper, a LED micro-display device with AlGaInP epitaxial wafer as thesubstrate is presented. The following results are achieved during the study.1. The area of uniform current spreading on the active layer of the tri-stripelectrode’s can rise to more than65.02%of the one-strip electrode’s and more than25.63%of the bi-strip one’s, therefore, the light emission efficiency of themicro-LED array can be improved.2. The hollow-square-electrode is proposed based on the tri-strip electrode. Thewidth of the electrode is15m. The largest area of uniform current spreading on theactive layer can be achieved as well as the best light emission efficiency.3. Then, a fabrication process based on MEMS （Micro electro mechanicalsystem） technology is presented. Lithography and ICP process are the mostimportant parts.4. The process parameters of the LED micro-display device’s fabrication arestudied by doing lithography experiments as well as substrate polishing experiment.H3PO4system（H₃PO₄：H₂O₂：H₂O=1：1：2） is chosen to use as the etchant and theetching rate of2.57m/min is achieved.