Reseach On The Stability Of Lpcvd Process Of0.13um Gate Polysilicon

With the development of the semiconductor technology, CD of thedevices becomes smaller and smaller, and the process is also increasinglydifficult. When it came to the mass production of the0.13μm products at asemiconductor manufacturing corporation in China, many problems weredetected in the uniformity of polysilicon gate resistance, which wereproduced in the furnace process. The uniformity of polysilicon gateresistance showed the difference between tool and tool, and differentpositions at one tool. The variance in the uniformity of polysilicon gateresistance caused the yield loss or even the product scrap.This thesis investigated the influence of the initial saline flow rates onthe uniformity of polysilicon resistances and the polysilicon grain sizes. Theinitial saline flow rates were proportional to the uniformity of polysiliconresistances, and inversely proportional to the polysilicon grain sizes. Theconcerned factors of the uniformity of the gate resistance have been foundout by designed experiments and TEM methods. The relationship betweeninitial saline flow rates and the uniformity of poly gate resistance wasmonitored. The experiment results indicated that the improved process candefect process stability by the initial saline flow profile, and improved theprocess compatibility (the uniformity of polysilicon gate resistance of littlewindow's product extend two tools to all tools). The production yield wasimproved from93.55%to94.83%.