S-band Power Amplifier Chip Design

With the development of microwave communication technology,the demands for communication system are much higher,such as miniaturization and reliability. Due to its small size, reliability and cheap in large quantities, Monolithic Microwave Integrated Circuit (MMIC) is one of the best choice of Electronic Warfare(EW)and civil communication systems.As the key component of communication system, MMIC power amplifier is very important for EW and communication applications. The research of HBT MMIC monolithic power amplifier in this paper is reported. A two-stage MMIC power amplifier operating at S-Band (from 2 to 3 GHz) is developed for EW and communication applications using UMS HB20P process. The chip size is 4.0mm×4.5mm. The two-stage power amplifier has 22±0.2dB small-signal gain and input and output VSWR less than 2 from 2GHz to 3GHz , The 1dB compression output power are 37dBm.The designing simulation results indicate that this method is simple and feasible.