X-band High-power Solid-state Amplifier Design Technology Research

Compared with vacuum tube amplifier, solid state power amplifier have theadvantages of high reliability, low operating voltage, graceful failure, etc. In recentyears low-band solid state PA has already been widely used, however at X band, itsapplications is limited by the low output power. So the research of high power solidstate amplifier at X band is very meaningful.Recently the transistor used at X band solid state PA is mainly GaAs FET. The keydesign technology of high power amplifier are the design of GaAs FET amplifier andpower combiner. Based on the features of GaAs FET, at first this thesis introduces thedesign methods and theories of single-stage PA, expounds the design methods anddemands, and introduces a common used supply power modulating circuits. Secondlycommon power combining techniques are analyzed and compared. Based on thiscondition high power solid state amplifier is designed. The combining of manyamplifier chains is used in final stage. The combiner applies the integration ofmicrostrip circuits and waveguide-coaxial double probes combiners. Microwave CADsoftware is used to simulate and optimize all microwave circuits, simulating data andtest results are presented. Finally through testing, at 9.5GHz to 10.5GHz the outputpower of the power amplifier is greater than 280W, the power added efficiency (PAE)is greater than 15％.