Iii - V Family Of Quantum Well Resonant Tunneling And ¢ñ - ¢õ Characteristics Theory And Research

A detailed theoretical study and calculational analysis of I-V characteristic and resonant tunneling with quantum well structures composed of semiconductors inâ…¢-â…¤group are presented, which is based on semiconductor materials and the energy band structure.Firstly, the Fermi energy of GaAs and GaN with different material doping and doping concentration is gained by calculating in Matlab, which is based on Fermi level and carrier concentration statistics distribution function. And this makes transmission coefficient and tunneling current calculation easier.Secondly, from the view of quantum mechanics, we deduce the formula of transmission coefficient and tunneling current density through Schr?dinger equation directly. Furthermore, the experimental result and emulational result is analyzed and compared in GaAs/AlAs/In0.1Ga0.9As double-barrier quantum well structure, and the correctness and serviceability of formula is validated. Then the relationship that the transmission coefficient and I-V characteristic rely on barrier-width, well-width, temperature and the content of aluminum is discussed in Al_xGa_1-xAs/GaAs and Al_xGa_1-xN/GaN quantum well structures, and the tunneling current, peak-to-valley current ratio and resonance energy are obtained. Thus, by comparing them, we can get better parameter of quantum well structures to guide experiment.At last, the influence of uniaxial stress on quantum well structures is analyzed according to meso-piezoresistance. The effect of uniaxial stress to I-V characteristic is analyzed in calculation combining with Al0.3Ga0.7N/GaN double-barrier quantum well structure, and the variation of curve with mechanics signal is discussed.In brief, with theoretical study of transmission coefficient and I-V characteristic of quantum well structures composed with semiconductors inâ…¢-â…¤group, we can get the variation of I-V curve with mechanics signal, temperature and parameter of quantum well structures. This can provide theoretical assist to design semiconductors devices.