Study On Planar Resonant Tunneling Diode And Resonant Tunneling Transistor And Their Applications

In this thesis, the fabrication of planar resonant tunneling diodes and mesa-type resonant tunneling diodes, the measurement and analysis of MOBILE(monostable-bistable transition logic element)circuit cell build up by planar resonant tunneling diodes, the measurement and analysis of series resistance of resonant tunneling diodes, and fabrication of resonant tunneling transistor are studied. Material structure design and preparation, device structure and photomasks design, chip process, performance testing and analysis, and circuit performance are involved in the systemic work.Followings are the main achievements of the thesis:1. Resonant tunneling diodes were Successfully fabricated using N+GaAs substrate.2. The planar resonant tunneling diodes were fabricated for the first time in mainland, without etching the surface heavily doped layer before ion implantation, a new method was present by bringing the collector to the surface using silicon implantation, the idea of fabricating real planar RTD was made true. Its properties were studied and compared with mesa type RTD.3. The MOBILE circuit cell build up by planar resonant tunneling diodes and relative circuit were studied, and preliminary work was done for the next mix integration with planar RTD.4. The forming cause of series resistance of RTD, the effect on RTD circuit, the measurement method of series resistance and reduction of series resistance were studied systematically.5. The schottky gated resonant tunneling transistors were fabricated for the first time in China, including trench type GRTT and self-aligned GRTT, its properties were studied and analyzed.