Based On 0.18¦Ìm Cmos Technology Rf Mosfet Characteristics And Modeling Study

With fast growth in the radio frequency (RF) wireless communications market, the demand for high performance but low cost RF solutions is rising. Compared with the MOSFET models for both digital and analog application at low frequency, compact models for HF applications are more difficult to develop due to the additional requirement of bias-dependence and geometry scaling of the parasitic components as well as the requirements of accurate predication of the distortion and noise behavior. However the RF MOSFET modeling is still at a preliminary stage compared with the modeling work for digital and low frequency analog applications. Efforts from both industry and universities are needed to bring RF MOSFET models to a mature level in further improving the RF models in describing the AC characteristics more accurately, and in improving the prediction of noise characteristics, distortion behavior, and NQS behavior. RF modeling of MOSFET based on 0.18μm CMOS process is discussed.1. RF technology at present is introduced, included GaAs technology, Si bipolar technology and SiGe technology. The possibility of CMOS technology application in RF integrate circuit is discussed. And the process and special devices in the RF CMOS technology is introduced. The challenge of deep sub-micron meter RF CMOS technology is introduced. RF technology will the main process only the RF engineers have resolved the problem.2. Several common MOSFET models are introduced. The AC small signal model of RF MOSFET is discussed. The high frequency parasitic effect of MOSFET is emphasis on, included gate resistance, substrate resistance, and parasitic capacitance. And the optimization of the RF MOSFET layout will improve the performance of RF MOSFET.3. The devices have been measured and analyzed both in DC and RF conditions. And the BSIM3v3 model have been adopted to model the DC characteristic. The simulation data fits the measurement data well. Also thesub-circuit have been adopted to model the RF characteristic. The simulation data can fit the measurement data well below the 40GHz. The research for the RF technology in the paper can offer some theoretic guidance for applying CMOS in the RFIC. The optimization of the RF MOSFET layout has practical direction to improve the performance of RF MOSFET. The modeling of DC and RF can provide basis to set idiographic of HF devices modeling.