For Gan Materials Prepared By Hvpe Epitaxy Chamber Simulation

A horizontal hot wall HVPE system was desigr ed for preparing thick GaN layers which can be used as substrate. Model of fluid dynamic for GaN HVPE system was setup, gas concentration in the reactor was simulated For saving design time and money, and optimizing the reactor configuration.The main work are as follows:1. Model of fluid dynamic for GaN HVPE system was setup;2. Mole concentration of GaCl and NH3 under different configuration was simulated. The reactor structure was optimized according to the simulation results.The main achievements obtained in this work are as followed:1. The N2 carrier introduced into the reactor for the front can be distributed uniformly in front of the outlet of GaCl and NH3 pipe2. the GaCl concentration on the substrate has a strong dependence on the vertical distance between the outlet of GaCl pipe and substrate, and a weakly dependence on the horizontal distance. The GaCl concentration decreases rapidly with the vertical distance increasing.3. The NH3 concentration on the substrate has a weakly dependence on the horizontal distance between the outlet of NH3 pipe and substrate.4. the NH3 concentration on the substrate has a weakly dependence on the N2 carrier gas.The reactor structure was optimized according ;o the simulation results. A HVPE reactor configuration was designed on the basic of optimized configuration, which was verified over experiment.