The CFD Simulation Of GaN-MOCVD System Reactor

MOCVD(Metal Organic Chemical Vapor Deposition) is a key technology in the manufacturing of micro-electronics and photoelectronics.Because of the enormous markets in GaN-based blue light LEDs,the study of MOCVD system will meat a massive market demand as well as the huge economic efficiency but as advantages are accompanied by disadvantages,during enlarging the industrial production scale,the blockage on technology between countries become more and more serious,and it hinder the research progress seriously.But the study of MOCVD system is still underway in our country,many technologies remain immature,and many problem are unsolved。In the dissertation,we carried out a numerical model on the transport process of MOCVD reactor designed by Xidian University..1.By the simulation with different operating parameters(such as inlet flow rates, pressure,rotate speed,etc.) and reactor geometry parameters,we explore how they affect transport phenomena.It is found that recirculation cells due to natural convection and sudden expansions in the flow cross-section area can be reduced by increasing the flow rate,reducing the pressure,increasing the size of inner radius of reactor,increasing the inflow area and decreasing the distance between the susceptor and the reactor top surface.2.The three-dimensional simulation,with different rate and pressure,of the MOCVD reactor with on susceptor was made to discusses the difference in two-dimensional simulation and three-dimensional simulation.The simulation result indicate that the two dimensional simulation result in accord with three dimensional simulation result.So,the MOCVD reactor with three susceptor was simulated using two-dimensional method.3.The paper gets the optimization conditions of operating parameters,it Optimizes operating parameters of MOCVD system,including the flow velocity,pressure of reactor and rotation speed of susceptor,and got the optimization conditions,Which provides a theoretical basis for experiment。4.In this paper,we discuss the factors that influence the concentration of TMGa.It is found that uniform flow fields correspond to higher susceptor concentration of TMGa, and the higher susceptor temperature lead to the lower concentration of TMGa,while the flow field is stable,the impact of pressure is not very obvious.