Study Of The Nitration Processing In GaN Growth And The Growth Of GaMnN Film

GaN materials have the characteristics of wide band gap,high electron saturation drift velocity,low dielectric constant and good thermal conductivity. They have wide potential application and development in fields of microelectronics and optoelectronics.This work is supported by Nature Science Fundation of China of "the growth of self-organized GaN quantum dots structures by ECR-PEMOCVD and its characteristics"(# 60476008). In this paper, the initial growth technology of GaN hetero-epitaxy on Al₂O₃ substrate is groped by using ECR-PEMOCVD on ESPD-U which was developed in our lab ,and the parameters of nitridation processing are optimized and selected.In the experiment, GaN buffer layers have been deposited on substrates with a nitrogen plasma as a nitrogen source and TEG as a Ga source. And the influences of nitridation temperature and nitrogen flow rate are investigated. Sapphire is cleaned by the plasma of hydrogen mixed with nitrogen in order to improve cleaning quality. By comparing the results of RHEED, the processing parameters are optimized The crystal structure is characterized by X-ray diffraction (XRD) and the morphological characterizations are observed by atomic force microsiscopy (AFM). Experimental result showed that the buffer layers deposited on sapphire substrates with fairly good crystal quality are obtained according to optimized parameters.DMS GaMnN exhibiting certain concentration of Mn and good crystal qualities was successfully grown on substrate sapphire (α-Al₂O₃) by using of ECR-PEMOCVD in case of Cp₂Mn, N₂ and TEGa source . The samples were analyzed by XRD, AFM, RHEED and Electronic Probes. The graphs of RHEED presenting clear spot-like lattice and its three -dimensional growing model, demonstrated epitaxial layer GaMnN is single crystal and films is not very glossy. The film has been doped with Mn²⁺ ions. By analyzing AFM, we find GaMnN films are composed of many submicron grains piled in the consistent orientation. The XRD analysis showed that the growth of film inclines to c axis and the qualities of single crystal is well.