The Research Of Low-Noise Amplifiers Of Wireless Receivers

In recent years, the development of wireless communications has promote the academia and industry to research fully integrated wireless transceivers. Wireless receiver'RF Front-end once dominated by GaAs, bipolar, BiCMOS, and other technology. With the size reduction of the CMOS size and the development of technology,. with the CMOS Technology reduce the feature size and the advances in technology, CMOS RF front-end technology can be applied to achieve better performance, the CMOS fully integrated wireless transceiver has become a focus of reasearch..However, the development of radio frequency integrated circuits device requires a period of time, and it makes the separation RF devices will be in the very long-term existence. The wireless receiver module is the first active low-noise amplifier, it should receive from the antenna of a weak signal amplification, so it effect the performance of the system performance. The reaearch of CMOS low-noise amplifier and discrete low-noise amplifier module will have some practical value.This paper analyze the low-noise amplifier design theory, the theory of noise, COMS in the process of passive components and sub-micron structure of the MOS, simultaneously analysed the relationship between parameters and their Q, and then based on TSMC 0.18um CMOS process design an improved differential low-noise amplifier, The Gain is 19.9dB in the Centre frequency, NF is 1.49dB,Output P1-dB is 10dBm,and the OIP3 is 19dBm. At the same time the paper also studied on discrete low noise amplifier and designed a two discrete low-noise amplifier, the former is a discrete devices with matching design of the narrow-band low-noise amplifier, and the latter one is matched with microstrip line , and gain Parameters such as noise figure achieved the expected goals.