The Research And Fabrication Of The Real Space Transfer Device

This thesis is based on the project"Real Space Transfer Device"which is studied by new semi-conductor device and integrating team of electronic and information engineering school in Tianjin University in charge of the"973"project from national science and technology department. For researching the feasibility on the real space transition device, device simulation is finished by the HSPICE software, material preparation is completed in the Institute of Physics, CAS, device fabrication is accomplished in the lab of Tianjin University and the analysis on I-V measurement is proposed. So far, the firstδ-doping resonant tunneling real space transition device has been fabricated in our team, the current peak-valley ratio (PVCR) reaches 5.The research of RST device is completely introduced in this thesis, including principle of RST, material and layout design, device simulation, chip fabrication, test, result analysis and the application in the circuit. All of these are narrated in detail, giving emphasis to the device simulation and fabrication. In the aspects of simulation, theδ-doping resonant tunneling real space transition device are simulated, especially on the structure parameters, such as threshold voltage,total of electron and mobility of electron. The simulation result can serve for the designer on the research and provide the reference to the chip fabrication. Besides the semiconductor process, we represent the fabrication of RST device in detail and analyze the I-V measurement result. The negative resistance characteristic shows that RST device achieves the goal of our design .This thesis gives the whole dissertation on the RST device design, simulation, test and verification. This work is useful for the research and application of the RST device in future.