The Research Of Insulate Gate Bipolar Transistor Technology

These years, with the last and fast development of our country's economy, the energy consumption, especially power consumption, tends to be much more. Therefore, it is to be an important subject to develops the research and application of the new electric power electronic devices and modules, such as the representative product of new electric power electronic devices. IGBT(Insulate Gate Bipolar Transistor) enhances the performance index and the energy saving for the entire machine system.IGBT consists of hundreds and thousands of cells (that is packing), which is fabricated by a VLSI technology. IGBT combines the features of voltage-control in MOS devices and conductivity modulation in bipolar devices. It has many advantages: MOSFET's high input impedance, low power gate drive, simple drive circuit, high switching speed, bipolar transistor's high current density capability, low saturation voltage, high current processing capability, it is preferred over other power devices in many high voltage, high current and high switch speed applications. IGBT mainly uses in the inverter, the low noise power source, the UPS as well as electric motor frequency conversion velocity modulation and so on. At present, domestic IGBT products are mainly depended import. IGBT product is mass production abroad, but domestic IGBT is also at the development stage compared with overseas. The IGBT manufacture technology falls behind at least ten years in China. The IGBT manufacture domestically becomes an urgent question.This article describes the operating principle of IGBT, analyses the kinds of IGBT's structure in common currency, and also maintains the NPT-Trench-IGBT which is the development target, then fixes the slotting craft technology, the sub-micron tiny processing technology, the processing technology, the transparent...