Simulation And Process Of Junction Termination Techniques Of 1700V IGBT

In recent years, power electronics technology had got a fleetness development. Therefore, power electronic devices are power electronics technology foundation and make it a power driving force for development. As the third generation of power electronics products, modern high-voltage power semiconductor devices IGBT (Insulated-Gate Bipolar Transistor) has been more and more widely application in the field. Blocking the ability of modern high-voltage power semiconductor devices is a very important marking which measure their level of development. In order to improve its voltage capacity, we need to design the terminal structure of devices which reaches the required standards.The main purpose of this paper is to design a terminal structure so that the breakdown voltage should achieve 1700V. First, analyze a few main factors which decrease the breakdown voltage from the theory. At the same time, in accordance with domestic production of the actual characteristics, we decided to adopt a Field Plate and Field Limiting Ring portfolio protection technology as the basic framework of the design. Secondly, according to the overall device design requirements, the use of two-dimensional device simulation software which named Medici, combined with relevant literature data, determine some basic parameters of the terminal structure (ring spacing, ring width, field oxide thickness, substrate concentration, etc). To a single Field Limiting Ring as an example, discuss the general law about breakdown voltage changes with different parameters change. Thus, according to theoretical calculations and related documentation, to determine the number of the Field Limiting Ring. Finally, determine the terminal structure of the initial value of parameters and simulate or analysis with Medici. Optimize the structure from the voltage and electric field distribution. Optimize with the fixed-point approach, started from the least impact on the changes of the parameter, through the comparative analysis to determine the final parameters, and the simulation results have been satisfactory.The subject study carried out extensive simulation work. The design of the terminal structure of simulation results to reach 2000V. The internship company carried out a process experiment in accordance with the completely design, the result is 1850V, meet the design requirements, the error is in a reasonable range, Demonstrate that the design of the terminal structure in the actual production is feasible and more easily attainable. The research work in the thesis provides valuable reference for similar design.