Investigation Of The Fabrication Process For Structure Of Silicon Micro Channel

Micro channel structure exhibits numerous possible applications on Micro Channel Plate, Micro Total Analysis Systems, micro heat exchange device, and micro chemical reactor etc, especially for silicon micro channel. Silicon micro channel technology based on electrochemical etching process comes from macro porous silicon technology, and has the advantage of high aspect ratio achievement by employing simple and low cost equipment.In this paper investigation of the fabrication process for silicon micro channel structure is presented.Chapter 1 introduces the primary applications of micro channel structure, fabrication methods of silicon micro channel started with MEMS(Micro-Electro-Mechanical Systems), and the properties, basic principles and developing process of silicon electrochemical deep etching technique. The main diploma work is also briefly introduced.In Chapter 2 the mechanism of electrochemical deep etching process for silicon micro channel is investigated. The details for the experiments of this paper are presented.Chapter 3 studies the influence of the technological parameters to the electrochemical etching process for N type silicon micro channel, where the concentration of the solutions, bias voltage, back-side illumination, process temperature, magnetic field and preservation duration of substrate have been explored to the pore diameter, etching rate, surface morphology, smoothness of side wall and branch etching etc.In Chapter 4 the so-called bubble effect during the oxidation of silicon micro channel is discussed.Chapter 5 makes pilot study about etching at random on the silicon surface by electrochemical deep etching process without lithograph process.The last chapter, Chapter 6, is the summarizing of this paper and the prospect of silicon micro channel application in the future.