| At first the development of transparent conductive oxide film is summarized and the recent progress of aluminium doped zinc oxide (AZO) film are discussed in this paper. The magnetron sputtering is widely applied because it has the advantage of deposited fast and uniformity, basing on the comparison of thermal evaporation, sputtering, ultrasonic spray deposition, chemical vapor deposition and molecule bind extension. We prepared AZO thin films by R.F. magnetron sputtering with a AZO (98 wt.% ZnO 2 wt.% Al2O3) ceramic target in different Ar+H2 ambient and in different R.F. power. The structural, morphology, electrical and optical properties of the samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), spectrophotometer, Hall tester and four-point probe technique. Finally we get several conclusions as following:1. As the R.F. power increase, the thickness and growth velocity increase;The crystalquality improved results in that the resistivity attains 9.3×10-4Ω·cm and the best transmittance attains 89% in the visible range. These parameters have reached the demands of transparent conductive electrode of GaN LASER: p=10-4Ω·cm, T=85%.2. The appearance of H2 in ambient makes the grain size of crystallites larger, the carrier concentration increase and Hall mobility decrease. At last, the resistivity attains 3.41×10-4Ω·cm and the best transmittance attains 80.5% in the visible range.The present work is not only a solid base for further research on AZO films, but also an active endeavor in the application process. |
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