The Research On Improving Performance Of Piezo-resistive Silicon Pressure Sensor Based On MEMS

Sensor technique is the most important sign of the level of the development of modern science and technology, and is one of three greatest technique of the information (including communication technique and calculator technique).Silicon pressure sensor based on MEMS(Micro Electronic Mechanism System)is the most widely used among all kinds of sensors. The status and function of sensor technique will be more important in the new technical revolution with the development of modern science and technology, especially in the development of micro-electronics and information industry. An upsurge in sensor research and application has been spread internationally. The industry of sensor has long way to walk in the technology gap in our country compared with overseas. The demand of sensor technique in our country can't been met. Sensor technique has bottlenecked and need be broken through newly.Firstly, the operation principle of the piezo-resistive pressure sensor was analyzed. The appropriate processes and parameters were chosen in the manufacture of substrate and sensing structure including oxidation, lithography and diffusion in order to reduce the nonlinear behave and the temperature drift and zero offset of sensor in the case.The square diaphragm was chosen through compared with the maximum stress and displacement of the diaphragm and the influence of length and width on output. The length and width and the segment of the sensing resistor design was determined from the diffusion type and impurity concentration together with the maximum power of the sensing resistor. The optimal key location of the sensing resistor on the elastic diaphragm was selected with the relation of sensing resistor's agility and stress. The essential design of silicon piezo-resistive pressure sensor sensing structure is discussed in the case. Sensing resistor is designed three sects in split-ring compared the old tow in maximum stress area. Lastly, it is feasible for the location of the sensing resistor on the elastic diaphragm by the calculation and emulator of chip attested.