Preparation And Study On The Heterostructure Of Pb-salt Narrow Gap Semiconductors

We have grown PbTe films on Si(111) and Si (100) substrates by using Hot Wall Epitaxy (HWE) technology. We found that it is easier to grow highly texture PbTe (100) films on Si (111) than the one on Si (111).We took TEM picture for the nuclear of PbTe which was grown on Si (111) and study the effect of reconstraction of substrate surface on the growth of epitaxial films. We did I-V test for n-PbTe(100)/p-Si(111) heterojunction. The I-V curve shows that it has good junction character. We did C-V measurement, so we got the value of built-in voltage and the band offset and drew the sketch for the interface. We did photo-voltage measurement also. The result shows that its photo-voltage effect is very clear. This heterojunction can be made infrared detector. We tried to grow PbTe/PbSnTe SL (Super Lattice) by using the simplified HWE apparatus. The TEM picture shows that the interface of this SL is clear. We calculated the period of this SL. From the date of distance between the satellite peaks of XRD. the result is closs with the estimated value from growth rate.