Study Of Si/SiGe-based P-type Resonant Tunneling Diode

With the development of the IC manufacture process, the conventional transistor technology will reach a minimum size limit in the future and new devices will need to take the place of the conventional transistor. In the past few years, revolutionary device concepts have been actively sought, particularly in the two related areas known as nanoelectronics and single electronics. Tunneling diode is just one of the most promising nanoelectronics devices. Si/SiGe-based p-type resonant tunneling diode(RTD) is more compatible with the current Si process than other kinds of tunneling diode. Therefore, Si/SiGe-based p-type RTD was investigated in this thesis.After giving the basic knowledge about RTD and Si/SiGe heterostructure, double-barrier-single-quantum-well(DBQW) structure was designed using Si/SiGe heterostructure valence-band engineering. DBQW epitaxy was grown in the UHV/CVD system-GSE400 designed by our own group and analyzed by DCXRD, Raman, SIMS and XTEM. Then RTD with PVCR of 1.26 and peak current density of 60KA/cm2 at room temperature was fabricated successfully. The relationship between the characteristics of RTD and its structure parameters was given and proven by experimental data. Energy levels in the quantum well were obtained by transfer matrix method roughly. They help to discuss the abnormal peak voltage. In order to add the DC model of RTD into SPICE circuit simulator and design RTD circuits, parameters of current-voltage equation were extracted after considering the effect of series resistance.