Numerical Studies On Etch Profiles In Plasma

Based on the experimental conclusion that in the ion energy flux limited region the etch rate is proportional to the incident ion energy flux ,a model for the simulation of etching in ion-assisted etching of long trenches on semiconductor wafers is developed. The etching profiles for a collisionless plasma sheath is modeled first. Then,based on the research work of W.J.Chen,the etch profiles for a collision plasma sheath in three different plasma reactors - Parallel-plate Rf Plasma Reactor Inductively Coupled Plasma Reactor and Helicon Plasma Reactor are also modeled and compared. Finally, the actual etch parameters with dimensions and etch rate are calculated from the model parameters for the argon and chlorine plasma. The correctness of these parameters is verified by comparing the simulation result and experimental result of n.