| BackgroundOral ulcer is one of the common diseases of oral mucosa. The overall morbidity of oral ulcer is about 20%. The etiological factors of oral ulcer are complicated, which individual difference play an important role. The pathogenesis of oral ulcer remains obscure and many factors are implicated in the disease. Topical treatment with systemic treatment is commonly used of oral ulcer to prolong interval stage, to reduce active stage and to release the pain. In various treatments, the laser treatment is one of physical therapy.After the first ruby laser was developed, it had commonly used in medical fields. According the effect of tissues laser divided into high-level laser and low-level laser.The mechanism of low-level laser is biostimulation effect which can improve wound healing,analgesia effect,however, there is controversy about the effectiveness.The main reason is different dentists used different parameters (wavelength, time, frequency). So does the treatment different. The mechanism of laser analgesia is not clear.The semiconductor laser is low-level laser, which is the most popular for oral ulcer. The main wavelength of semiconductor laser is 650 nm and 810 nm. The purpose of this report is to provide low-level semiconductor laser therapy oral ulcer efficiences, appropriate parameters.ObjectiveThis study is aim to obtain a suitable laser parameters and analgesia mechanism by comparing the therapeutic efficacy of different semiconductor laser energy levels.Lasers radiation on oral ulcer ainimal model which established in New Zealand white rabbit similar to oral ulcer of mankind. Thus, the result can provide theoretical support for the oral ulcer therapy.Materials and methods1.50 rabbits in experiment group were divided into 5 groups (each group had 10 sample) to receive experimental treatment of radiation by laser with the energy level of 810nm 100mw,810nm 300mw,810nm 500mw,610nm 100mw,610nm 200mw. The laser groups were treated 3 days (once per day).24 hours later, the 4 sampel of each group were sacrificed. The oral mucosa was harvested for HE staining. The other 6 rabbits in each group to raise more days untill the oral ulcer healing.2.After established the rabbits model of oral ulcer, the laser group were treated by laser for 3 days (once per day).24 hours later they were sacrificed to observe theβ-EP,5-HT concentration in oral mucosa to verify the analgesia effects of the semiconductor laser.Results1.The average healing time of the ulcer:810nm 100mw laser side (10.17±2.04), ulcer side(10.54±2.07),810nm 300mw laser side (7.51±1.05), ulcer side (9.62±1.21),810nm 500mw laser side (9.64±2.25) ulcer side (10.68±1.96) 650nm 100mw laser side (9.83±1.47)ulcer side (10.83±2.03) 650nm 200mw laser side (7.67±1.37) ulcer side (11.33±1.63)。Dates in 810nm 300mw and 650nm 200mw show significant difference between laser side and ulcer side. There were no signifycant difference between both in other groups.2.β-EP concentration:Laser side,ulcer side compare to contral goup have marked difference. Laser side compare to ulcer side have no obviously difference. 5-HT concentration:Laser side,ulcer side compare to contral goup and laser side compare to ulcer side all are no obviously difference.Conclusions1. The result showed that the healing time of laser radiation sides were less than the control group. but only 810nm 300mw,650nm 200mw groups have weight diffrent the time laser side is the shortest. our result confirmed that use the proper semiconductor laser can be effective to treat oral ulcer.2. The result show thatβ-EP improved in ulcer tissue,but the low-level laser irradiation unimprovedβ-EP release. The concentration of 5-HT have no obviously different.The mechanism of analgesia and appropriate analgesia parameters are need to more study. |
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