Study Of Defects Induced By Electron Irradiation In High Temperature Annealed InP Single Crystal

In this thesis, electron irradiation induced defects in undoped InP material pre-annealed at high temperature in FeP₂ and P ambience have been studied. After irradiation, carrier concentration and mobility of the samples have obvious change, which relates to the electrical compensation of defect induced by radiation. DLTS of low resistivity n type InP obtained by annealing undoped InP in FeP₂ atmosphere reveals that some defects in InP are suppressed, some new defects are generated in the meantime after the electron irradiation. Under the same condition, electron irradiation induced defects of as-grown InP sample are more stable, while the defects in the FeP₂ ambient annealed InP have a fast discovery behavior. In addition to Fe acceptor, there is no obvious defect peak in the sample before irradiation, whereas five defect peaks with activation energies of 0.23eV, 0.26eV, 0.31eV, 0.37eV and 0.46eV have been detected after the irradiation. InP annealed in P ambient has more thermally induced defects, and the defects induced by electron irradiation have characteristics of complex defect. Nature, recovery mechanism and influence on material property of the defects have been discussed from the results.