Low-Temperature Photoluminescence Studies Of Characteristics Of Irradiated 6H-SiC

In this article , Low temperature photoluminescence measurements have been performed on as-irradiated and postannealed n-type 6H-SiC ,the postannealing temperature is up to 1650癈 .Three sharp lines at 478^ 483.3 and 486.1nm respectively were observed for the first time in the as-irradiated samples and argued to be due to vacancy-like induced by irradiation. Li lines related to Di-center, which can be observed in all SiC polytypes after various kinds of particle bombardments or irradiations and can withstand high-temperature annealing up to 1700癈, were observed with the samples after postannealing above 700癈. The observation of different thermal annealing behaviors of the Di-center in PL spectra and the Ei/Ea in Deep-Level Transient Spectroscopy (DLTS) spectra argues against the identification that Dj-center and E\/E2 originate from the same defect. Due to high-thermal stability and independent of impurities Dj-center is argued to originate from antisite or antisite complex. Furthermore, the LTPL measurements have been taken on as-irradiated and postannealed p-type 6H-SJC , L; lines related to Dj-center were not observed with sample after postannealing at 1500癈 ,the observation of a series of high intensity spectra which may mask the D1-center due to the recombination of the D-A pairs.