Computer Simulation Of Plasma Sheath Evolution In Plasma Source Ion Implantation

In plasma surface modification, the characteristics of the plasma sheath play a major role in the plasma source ion implantation (PSII) process. Plasma source ion implantation is a process in which a target is pulse biased to a high negative voltage to form an expanding plasma sheath. It circumvents the line-of-sight restriction of conventional ion implantation, makes implantation devices simple, inexpensive.In this paper, we perform a one-dimensional fluid dynamic model of PSII for collisionless plasma. The model contains the ion-fluid equations of continuity and motion, the electricity Boltzmann relationship, and Possion' equation. We employ this model to describe the evolution of plasma sheath.