Computer Simulation Of Plasma Sheath Evolution In A Cylindrical Bore In Plasma Source Ion Implantation

Plasma source ion implantation (PSII) is crucial because it affects the resultant surface properties and circumvents the line-of-sight restriction of conventional ion implantation. Moreover, it displays specially useful prospect towards the target such as a cylindrical bore. Plasma source ion implantation is a process in which a target is pulse biased to a high negative voltage to form an expanding plasma sheath.In this thesis, two-dimensional fluid model is applied to the problem in computing ion dynamics in the sheath of the end of a cylindrical bore using an auxiliary electrode for finite rise-time voltage pulses. The potential, ion flux and ion dose distributions are calculated by solving Poisson's equation and the equations of ion motion and continuity using finite difference methods. Our results indicate that there exist the differences of ion dose among the inner, outer surfaces and the end surface of the bore.