Design And Preparation Of Organic-inorganic Hybrid Halide Perovskite Field-effect Transistors

Optoelectronic information technology has been a research hotspot in recent years,and with the continuous development of new optoelectronic devices,systems are becoming more and more advanced.The key to achieving such results is the selection of device architecture and materials.In recent years,perovskite materials have attracted attention due to their unique optoelectronic properties,which not only have high carrier mobility and absorption coefficients but also have low costs,making them have broad application prospects in the field of optoelectronic information technology.At the same time,novel optoelectronic materials have become one of the hotspots in current research.In this field,experts and scholars are making breakthrough progress in material design,preparation,and performance characterization through continuous innovation and research.As an important component of this field,the research significance of new optoelectronic devices is very significant,and it has long-term positive significance for promoting scientific and technological progress and industrial development.This paper focuses on the design and preparation method of organic-inorganic hybrid halide perovskite thin-film transistors,and studies the structural parameters of perovskite transistors and the influence of different dimensional perovskite materials on transistor electrical properties through simulation design and experiments on three-dimensional perovskite material MAPb I₃ and two-dimensional perovskite material（ThMA）₂（MA）_n-1Pb_nI_3n+1（referred to as ThMA for short）thin-film transistors.The main research contents are as follows:The design and experimental preparation of MAPb I₃ perovskite transistor devices were carried out.The simulation analysis of electrical properties showed that the electric field strength near the drain was the highest and the potential change was the fastest at V_DS=40V and V_GS=-20V,and the current density and hole density at the Si O₂-perovskite layer interface were the highest.The simulation design and analysis of MAPb I₃ perovskite thin-film field-effect transistors with different channel lengths,film thicknesses,and dielectric layer thicknesses showed that the smaller the channel length and the thinner the dielectric layer thickness,the better the electrical properties of the perovskite transistor,because the smaller the channel length,the smaller the resistance between channels,and the higher the hole density at the Si O₂-perovskite layer interface as the dielectric layer thickness becomes thinner.MAPb I₃ perovskite films were prepared using a one-step solution method,and the use of an anti-solvent in the coating process can improve the crystallinity and grain size of the film.Therefore,MAPb I₃perovskite thin-film transistors were prepared,and their transfer characteristics,output characteristics,and I-T photoresponse curves were tested.The test results showed that the gate voltage had a certain regulatory ability on the transistor current,and the device showed a fast and reliable response to light.The stability of MAPbI₃ perovskite transistors in air was studied,and although the device had good optoelectronic performance,its stability in air was poor.The design and experimental preparation of ThMA two-dimensional perovskite transistor devices with different layers were carried out.The simulation study of the influence of different layers of ThMA perovskite thin-film field-effect transistors showed that the more inorganic layers,the better the electrical properties of the ThMA two-dimensional perovskite transistor,because the n=3 ThMA two-dimensional perovskite transistor had a large hole density at the Si O₂-perovskite layer interface under the simulated working state.Simulations under different layer devices under light conditions showed that the carrier mobility of the device was improved,and the current at the source-drain electrode was significantly increased due to the increase in hole density at the Si O₂-perovskite layer interface after light exposure.ThMA two-dimensional perovskite thin-film transistors with n=1 and n=3 were prepared,and their transfer characteristics,output characteristics,and I-T photoresponse curves were tested.It was found that the gate voltage had a certain regulatory ability on the transistor current,and the device showed a fast and stable response to light.The stability of ThMA perovskite transistors in air was studied,and the device still had some optoelectronic performance after 3 days,and its stability was much higher than that of MAPb I₃ perovskite transistors.These results expand the application prospects of perovskite materials in new optoelectronic devices.