Research On The Characteristics Of Graphene Hall Elemen

Graphene’s physical properties make it an ideal nanomaterial,its excellent performance in mobility,which makes it of high research value in semiconductor devices.Graphene improve the new generation of electronic devices.In this paper,multilayer graphene was prepared by mechanical stripping method,and then the single-layer graphene on copper base was transferred to silicon substrate by wet transfer method,and analyzed the influence of graphene layer number on the Raman spectrum peak size and peak position.On this basis,TCAD Atlas simulation software was used to build the graphene Hall element model,and the influence of the graphene size on the characteristics of the graphene Hall element was studied.The magnetic sensitivity characteristics of the graphene and the silicon-based Hall element were simulated and analyzed.The chip layout of the graphene Hall element was designed by L-edit.Graphene Hall element were prepared by wet transfer and reactive ion etching（RIE）.At room temperature,the temperature and magnetic properties of graphene Hall element were studied.The results show that the resistance value of graphene Hall element decreases with the increase of temperature in the range of-40～60℃,and the temperature coefficient is about-393 ppm/℃.V_DD=0.1 V,the resistivity of graphene calculated by van der Burgh method is about 4.63×10^-4Ω·cm.The voltage sensitivity is0.742 V/V·T and carrier mobility is 2510 cm²/（V·s）under the conditions of B=10 m T and V_DD=0.01V,which lays a foundation for further study of graphene properties.