Study Of Macro Model For High Voltage Shorted-Anode SOI Lateral Insulated Gate Bipolar Transistor

Intelligent Power Module（IPM）integrates power semiconductor devices and driver,protection circuits into the one module,playing an important role in the control system of inverter motors.With the continuous development of electronic products toward miniaturization and modularization,as well as the deepening of environmental protection concept,the demand for single-chip integrated IPM is becoming more and more prosperous.One chip contains power devices and various control circuits.SOI LIGBT becomes one of the most core devices in single-chip integrated IPM,so the simulation design of the chip needs the support of accurate device model.Shorted-anode LIGBTs are proposed to suppress the tail current and reduce the turnoff loss.The N+ region introduced at the anode enables the device to have a conversion process from LDMOS unipolar mode to IGBT bipolar mode during operation,which makes the conventional LIGBT model not available for this type of device.The thesis takes the shorted-anode SOI LIGBT as the research object,analyzes its structural characteristics and working principle in detail,and builds a macro model suitable for circuit simulation.Firstly,a static model is builded and the equivalent circuit of first scheme is proposed for the improved shorted-anode LIGBT device.After appropriate simplification,the second scheme model suitable for conventional shorted-anode structure can be obtained.The self-heating effect is considered in the model and also two schemes are given,one uses the RC network sub-circuit to simulate the temperature change caused by the power loss in the device,and the other uses only the voltage-controlled resistor to simulate the current drop caused by the self-heating effect.The former has a clear physical meaning but a relatively complex structure,and the latter is simple but has no physical meaning.formulate a reasonable parameter extraction plan by analyzing the meaning of the parameters,and extract the model parameters by fitting the measured data at various temperature.The average error of the final fitting result does not exceed 5%,and the maximum error does not exceed 10%.Then a dynamic model is builded.On the one hand,the parasitic capacitance will delay the change of the voltage.On the other hand,the excess carriers stored in the base region will generate a tail current.Based on this,the capacitance model and the tail current model are proposed respectively,the tail current is realized by the storage charge subcircuit.The accuracy of the model has been verified by using the switching test waveform under the resistive load,and the error of the final result does not exceed 8%.