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Study On The Performance Of Novel Polyelectrolyte PAA/PEI-based Transparent And Flexible Resistive Random Access Memory

Posted on:2022-12-01Degree:MasterType:Thesis
Country:ChinaCandidate:J Z RenFull Text:PDF
GTID:2518306743974679Subject:IC Engineering
Abstract/Summary:PDF Full Text Request
With the progress of science and technology,people's requirements for data processing and storage increase greatly.Resistive random access memory(RRAM)integrate storage and computing into one unit,showing huge energy efficiency and hardware development advantages in next-generation storage technology,at the same time,the research of memory-based neural morphological computing has a good application prospect in pattern recognition,perceptual learning and convolution neural networks.In addition,the production and use of electronic consumer products have a large number of electronic wastes.The ecological problems appeared gradually due to the short service life and low recovery rate of silicon-based consumer electronics.Organic materials-based RRAM has many advantages such as low cost,simple process,easy preparation,large-area application and flexibility.Polyacrylic acid(PAA)and polyethyleneimine(PEI)are polycation and polyanion electrolytes respectively,which are environment-friendly materials with great stability.In this paper,a novel RRAM based on polyelectrolytes is prepared by magnetron sputtering technology and spin coating method.We tried to explain the mechanism of resistance transformation and discussed the factors that influenced the performance of resistive memories.First of all,based on the preparation of ITO/PAA/PEI/ITO device structure were compared in different solution concentration and molecular weight.The experimental results show that the coating film and its resistive switching(RS)performance are the best when the concentration of solution is 0.25 wt.% and the molecular weight of PAA and PEI are 3,000 and 750,000 respectively.The device has a potential to achieve excellent RS performance and synapse functionality as well as greater flexibility when compared to the oxide-based memories.An on/off resistance ratio of 50 can be maintained without degradation for up to 20,000 cycles(at flat)and over 4,000 cycles(bending to a 2-mm radius 10,000 times)with the continuous voltage sweep,and it can also be maintained at 85 °C for 10,000 s.Above all,the device performs various synaptic functions,including spike-timing-dependent plasticity,pulse pair plasticity,and short-term and long-term plasticity in the potentiation and depression processes.The RS mechanism of the device is proposed innovatively: the counterions and two oppositely charged polyelectrolyte chains can move in and out of each other depending on the applied electrical potential(pulse),resulting in a change in the potential drop at the interface of the polyelectrolyte bilayer and its electrodes,which can be attributed to the RS mechanism and various synaptic functions.This insight may accelerate the technological deployment of the organic resistive memories.
Keywords/Search Tags:RRAM, PAA/PEI, Polyelectrolyte, Synaptic Plasticity, Flexibility
PDF Full Text Request
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